导师姓名：王俊
性别：
人气指数：72

所属院校：湖南大学
所属院系：电气与信息工程学院
职称：教授
导师类型：博导
招生专业：


通讯方式 :
电子邮件：junwang@hnu.edu.cn, jwangncsuchn@gmail.c


个人简述 :
王俊，男，汉族，1979年7月出生于湖北省黄冈市，湖南大学电气与信息工程学院教授、博士生导师，2013年中组部“青年千人计划”入选者

科研工作 :
1. L. iao, J. Wang, S. Tang, Z. Shuai, X. Yin, J. Shen, A New Proportional Base Drive Technique for SiC Bipolar Junction Transistor, IEEE Transactions on Power Electronics, 2016.2. 唐赛，王俊，沈征，刘江。新型碳化硅双极结型晶体管自适应驱动电路，电力电子技术，2016, 50（6）.3. J. Wang, S. Xu, J. Korec, “Power MOSFET with Integrated Gate Resistor and Diode-Connected MOSFET”, United States Patent **.4. J. Korec, S. Xu, J. Wang, B. Yang, “Capacitors and Methods of Forming”, United States Patent **.5. Y. Du, J. Wang, G. Wang, A. Q. Huang, "Modeling of the High-Frequency Rectifier With 10-kV SiC JBS Diodes in High-Voltage Series Resonant Type DC-DC Converters", IEEE Transactions on Power Electronics, vol. 29, no. 8, August 2014, pp.4288-4300. 6. B. Yang, J. Wang, S. Xu, J. Korec, Z. Shen, "Advanced Low-Voltage Power MOSFET Technology for Power Supply in Package Applications", IEEE Transactions on Power Electronics, vol. 28, no. 9, September 2013, pp.4202-4215. 7. J. Wang, A. Q. Huang, W. Sung, Y. Liu, B. J. Baliga, “Smart grid technologies,” IEEE Industrial Electronics Magazine, vol. 2, no. 2, Jun. 2009, pp. 16-23. 8. J. Wang, A. Q. Huang, “Design and Characterization of High Voltage Silicon Carbide Emitter Turn-off Thyristor (SiC ETO),” IEEE Transaction on Power Electronics, vol. 24, no. 5, May 2009, pp. 1189-1197. 9. J. Wang, T. Zhao, A. Q. Huang, R. Callanan, A. Agarwal, “Characterization, Modeling and Application of 10 kV SiC MOSFET,” IEEE Transactions on Electron Devices, vol. 55, no. 8, pp. 1798-1806, Aug. 2008. 10. J. Wang, A. Q. Huang, S. Atcitty, I. Gyuk, “Silicon Carbide Emitter Turn-off Thyristor (SiC ETO),” International Journal of Power Management Electronics, Volume 2008, Article ID 891027, 5 pages, 2008.11. J. Wang, J. Li, T. Zhao, A. Q. Huang, R. Callanan, F. Husna, A. Agarwal, “10 kV SiC MOSFET Based Boost Converter,” IEEE Transaction on Industry Applications, vol. 45, no. 6, pp. 2056-2063, September, 2009. 12. J. Wang, D. Zhao, Y. Sun, Wang, S. Zhang, H. Yang, S. Zhou and M. Wu, “Thermal annealing behavior of Pt on n-GaN Schottky contacts,” JOURNAL OF PHYSICS D: APPLIED PHYSICS, Vol. 36, 2003, pp. 1018-1022. 13. J. Wang, D. Zhao, Z. Liu, G. Feng, J. Zhu, X. Shen, B. Zhang and H. Yang, “Metal-semiconductor-metal ultraviolet photodetector based on GaN,” Science in China (Series G), Vol. 46, No. 2, 2003, pp. 198-203.14. Q. Zhang, J. Wang, A. Agarwal, J. Palmour, A. Q. Huang, et al., “Design and Characterization of High Voltage 4H-SiC p-IGBTs,” IEEE Transactions on Electron Devices, vol. 55, No. 8, Aug. 2008, pp. 1912-1919.

教育背景 :
1996.9—2000.7 中国 华中科技大学 电子科学与技术系 学士；2000.9—2003.7 中国 中国科学院半导体研究所 固体电与微电子学专业 硕士；2003.8—2005.5 美国 南卡罗莱纳大学 电子工程专业 硕士；2005.6—2009.12 美国 北卡罗莱纳州立大学 电子工程专业 博士。